THE 5-SECOND TRICK FOR GERMANIUM

The 5-Second Trick For Germanium

s is with the substrate material. The lattice mismatch causes a big buildup of strain Strength in Ge levels epitaxially developed on Si. This strain energy is principally relieved by two mechanisms: (i) era of lattice dislocations at the interface (misfit dislocations) and (ii) elastic deformation of both equally the substrate along with the Ge isl

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